If a reverse-biased voltage is applied across a p-n junction, the depletion layer width is
Answer Details
A p-n junction is a boundary between a p-type semiconductor and an n-type semiconductor. When a reverse-biased voltage is applied across a p-n junction, the negative terminal of the voltage source is connected to the p-type semiconductor, and the positive terminal is connected to the n-type semiconductor.
This creates an electric field that opposes the flow of current through the junction. The electric field pushes the majority carriers away from the junction, widening the depletion layer. The depletion layer is the region around the p-n junction where there are no free charge carriers.
Therefore, the correct answer is that the depletion layer width is increased when a reverse-biased voltage is applied across a p-n junction.