Charge carriers in doped semiconductors are

Doping means adding a controlled trace of impurity to a pure semiconductor such as silicon or germanium to increase the number of mobile charge carriers. Silicon has four valence electrons and forms four covalent bonds.

• Adding a pentavalent impurity (phosphorus, arsenic, antimony) supplies five valence electrons per atom. Four complete the bonds and the fifth is left loosely bound, becoming a free electron. The material is n-type and electrons are its majority carriers.
• Adding a trivalent impurity (boron, aluminium, gallium) supplies only three valence electrons, so one bond is left short of an electron. That vacancy is a hole, and it moves through the lattice as neighbouring electrons hop into it, behaving like a mobile positive charge of magnitude \(+e\). The material is p-type and holes are its majority carriers.

Both kinds of carrier are present in any doped sample, one as the majority and the other as the minority produced by thermal generation, so the charge carriers in doped semiconductors are electrons and holes.

The distractors rest on real misconceptions. Protons and neutrons are locked in the nuclei of the fixed lattice atoms and cannot migrate, so they never carry current in a solid. Anions and cations do carry charge, but that is electrolytic conduction in a solution or molten salt, where whole ions drift; a semiconductor crystal keeps its atoms in place and moves only electrons and the holes they leave behind. Remember for the examination that conventional current in a p-type region is described as a flow of holes in the direction of the field, while the electrons that actually move travel the opposite way.